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PDF BUL68B Data sheet ( Hoja de datos )
| Número de pieza | BUL68B | |
| Descripción | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SEME
LAB
MECHANICAL DATA
Dimensions in mm
6.40 (0.252)
6.78 (0.267)
5.21 (0.205)
5.46 (0.215)
123
2.18 (0.086)
2.44 (0.096)
0.84 (0.033)
0.94 (0.037)
1.09 (0.043)
1.30 (0.051)
5.97 (0.235)
6.22 (0.245)
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
8.89 (0.350)
9.78 (0.385)
BUL68B
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
Designed for use in
electronic ballast applications
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
4.60 (0.181)
Typ.
0.46 (0.018)
0.61 (0.024)
1.04 (0.041)
1.14 (0.045)
Pin 1 – Base
I-PAK(TO251)
Pin 2 – Collector
Pin 3 – Emitter
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage(IE=0)
200V
VCEO
Collector – Emitter Voltage (IB = 0)
100V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC Continuous Collector Current
12A
IC(PK)
Peak Collector Current
17A
IB Base Current
5A
Ptot Total Dissipation at Tcase = 25°C
20W
Tstg Operating and Storage Temperature Range
–55 to +150°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL68B.PDF ] | |
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