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PDF BUL70A Data sheet ( Hoja de datos )
| Número de pieza | BUL70A | |
| Descripción | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SEME
LAB
MECHANICAL DATA
Dimensions in mm
0.32
0.24
16°
max.
0.10
0.02
13°
1.70
max.
10°
max.
6.7
6.3
3.1
2.9
4
3.7 7.3
3.3 6.7
123
1.05
0.85 2.30
4.60
0.80
0.60
SOT-223
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
Pin 4 - Collector
BUL70A
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
Designed for use in
electronic ballast applications
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• SURFACE MOUNT FOOT PRINT
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage(IE=0)
1000V
VCEO
Collector – Emitter Voltage (IB = 0)
500V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC Continuous Collector Current
4A
IC(PK)
Peak Collector Current
7A
IB Base Current
2A
Ptot Total Dissipation at Tcase = 25°C
3W
Tstg Operating and Storage Temperature Range
–55 to +150°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL70A.PDF ] | |
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