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PDF BUL76B Data sheet ( Hoja de datos )
| Número de pieza | BUL76B | |
| Descripción | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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SEME
LAB
BUL76B
MECHANICAL DATA
Dimensions in mm
10.2
3.6 Dia.
4 .5
1.3
123
1.3
0 .8 5
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
Designed for use in
electronic ballast applications
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• HIGH CURRENT
• EFFICIENT POWER SWITCHING
2.54 2.54
Pin 1 - Base
TO-220
Pin 2 - Collector
0 .5
Pin 3 - Emitter
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage(IE=0)
250V
VCEO
Collector – Emitter Voltage (IB = 0)
100V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC Continuous Collector Current
70A
IB Base Current
14A
Ptot Total Dissipation at Tcase = 25°C
85W
Tj Junction Temperature
150°C
Tstg Operating and Storage Temperature Range
–55 to +150°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUL76B.PDF ] | |
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