|
|
Número de pieza | BUL791 | |
Descripción | NPN SILICON POWER TRANSISTOR | |
Fabricantes | Power Innovations Limited | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUL791 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Copyright © 1997, Power Innovations Limited, UK
q Designed Specifically for High Frequency
Electronic Ballasts up to 125 W
q hFE 6 to 22 at VCE = 1 V, IC = 2 A
q Low Power Losses (On-state and Switching)
q Key Parameters Characterised at High
Temperature
q Tight and Reproducible Parametric
Distributions
BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING
Collector-emitter voltage (VBE = 0)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%.
2. This value applies for tp = 300 µs, duty cycle ≤ 2%.
SYMBOL
VCES
VCBO
VCEO
VEBO
IC
ICM
ICM
IB
IBM
Ptot
Tj
Tstg
VALUE
700
700
400
9
4
8
14
2.5
3.5
75
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1 page BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
L791CFB
10
1·0
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
L791CRB
10
IB(on) = IC / 5
VBE(off) = -5 V
8 TC = 25°C
6
0·1 TC = 25°C
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC Operation
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 9.
1000
4
2
0
0 100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 10.
PRODUCT INFORMATION
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BUL791.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUL791 | NPN SILICON POWER TRANSISTOR | Power Innovations Limited |
BUL791 | NPN SILICON POWER TRANSISTOR | TRSYS |
BUL791 | NPN SILICON POWER TRANSISTOR | Bourns Electronic Solutions |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |