DataSheet.es    


PDF BUL791 Data sheet ( Hoja de datos )

Número de pieza BUL791
Descripción NPN SILICON POWER TRANSISTOR
Fabricantes Power Innovations Limited 
Logotipo Power Innovations Limited Logotipo



Hay una vista previa y un enlace de descarga de BUL791 (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! BUL791 Hoja de datos, Descripción, Manual

Copyright © 1997, Power Innovations Limited, UK
q Designed Specifically for High Frequency
Electronic Ballasts up to 125 W
q hFE 6 to 22 at VCE = 1 V, IC = 2 A
q Low Power Losses (On-state and Switching)
q Key Parameters Characterised at High
Temperature
q Tight and Reproducible Parametric
Distributions
BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
RATING
Collector-emitter voltage (VBE = 0)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for tp = 10 ms, duty cycle 2%.
2. This value applies for tp = 300 µs, duty cycle 2%.
SYMBOL
VCES
VCBO
VCEO
VEBO
IC
ICM
ICM
IB
IBM
Ptot
Tj
Tstg
VALUE
700
700
400
9
4
8
14
2.5
3.5
75
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

1 page




BUL791 pdf
BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
L791CFB
10
1·0
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
L791CRB
10
IB(on) = IC / 5
VBE(off) = -5 V
8 TC = 25°C
6
0·1 TC = 25°C
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC Operation
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 9.
1000
4
2
0
0 100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 10.
PRODUCT INFORMATION
5

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet BUL791.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BUL791NPN SILICON POWER TRANSISTORPower Innovations Limited
Power Innovations Limited
BUL791NPN SILICON POWER TRANSISTORTRSYS
TRSYS
BUL791NPN SILICON POWER TRANSISTORBourns Electronic Solutions
Bourns Electronic Solutions

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar