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BULB128D 데이터시트 PDF




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부품번호 BULB128D 기능
기능 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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BULB128D 데이터시트, 핀배열, 회로
® BULB128D-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Ordering Code
BULB128D-1
Marking
BULB128D
Shipment
Tube
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage
(IC = 0, IB = 2 A, tp < 10µs, Tj < 150oC)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. Operating Junction Temperature
September 2003
123
I2PAK
(TO-262)
INTERNAL SCHEMATIC DIAGRAM
Value
700
400
V(BR)EBO
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
oC
oC
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BULB128D pdf, 반도체, 판매, 대치품
BULB128D-1
Inductive Fall Time
Inductive Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
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BULB128D 전자부품, 판매, 대치품
BULB128D-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
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관련 데이터시트

부품번호상세설명 및 기능제조사
BULB128-1

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST Microelectronics
ST Microelectronics
BULB128D

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STMicroelectronics
STMicroelectronics

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