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BULD25D 데이터시트 PDF




Power Innovations Limited에서 제조한 전자 부품 BULD25D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BULD25D 기능
기능 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
제조업체 Power Innovations Limited
로고 Power Innovations Limited 로고


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BULD25D 데이터시트, 핀배열, 회로
Copyright © 1997, Power Innovations Limited, UK
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
q Designed Specifically for High Frequency
Electronic Ballasts
q Integrated Fast trr Anti-parallel Diode,
Enhancing Reliability
q Diode trr Typically 500 ns
q New Ultra Low-Height SOIC Power Package
q Tightly Controlled Transistor Storage Times
q Voltage Matched Integrated Transistor and
Diode
q Characteristics Optimised for Cool Running
q Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
q Custom Switching Selections Available
q Surface Mount and Through-Hole Options
PACKAGE
Small-outline
Small-outline taped
and reeled
Single-in-line
PART # SUFFIX
D
DR
SL
D PACKAGE
(TOP VIEW)
B1
NC 2
NC 3
E4
8C
7C
6C
5C
NC - No internal connection
SL PACKAGE
(TOP VIEW)
B1
C2
E3
device symbol
C
description
B
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
E
switching transistors has tightly controlled
storage times and an integrated fast trr anti-parallel diode. The revolutionary design ensures that the diode
has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel
diode plus transistor.
The integrated diode has minimal charge coupling with the transistor, increasing frequency stability,
especially in lower power circuits where the circulating currents are low. By design, this new device offers a
voltage matched integrated transistor and anti-parallel diode.
This device is available in the now well established 8 pin low height surface mount D package, and the TO-
220 pin compatible SL package. Use of the SL package allows for a 40% height saving, making it ideal for
compact ballast applications.
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted)
Collector-emitter voltage (VBE = 0)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
RATING
SYMBOL
VCES
VCBO
VCEO
VEBO
VALUE
600
600
400
9
UNIT
V
V
V
V
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1




BULD25D pdf, 반도체, 판매, 대치품
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
LDX25DFB
10
BULD25D
TA = 25°C
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
LDX25SFB
10
BULD25SL
TA = 25°C
1·0 1·0
0·1
tp = 100 µs
tp = 10 ms
tp = 1 s
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 4.
1000
0·1
tp = 100 µs
tp = 10 ms
tp = 1 s
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 5.
1000
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
5 LDX25DRB
BULD25D
IB(on) = IC / 5
4 VBE(off) = -5 V
TA = 25°C
3
2
1
0
0 100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 6.
PRODUCT INFORMATION
4
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
5 LDX25SRB
BULD25SL
IB(on) = IC / 5
4 VBE(off) = -5 V
TA = 25°C
3
2
1
0
0 100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 7.

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BULD25D 전자부품, 판매, 대치품
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
Vs = 325 V
0V
FUNCTIONAL TEST CIRCUIT
BULD25
RB
Ns
RE
RB
Ns
RE
Cslew
Np
T2
L1
BULD25
Figure 12.
Rload
Ccoupling
Cfilter
IDDATBAL
COMPONENT VALUES USED IN
FUNCTIONAL TEST CIRCUIT
RB
RE
Rload
Ccoupling
Cslew
Cfilter
L1
22
1.8
470
47 nF
1.5 nF
3.2 nF
2.5 mH
T2 NP : NS
5:3
Figure 13.
PRODUCT INFORMATION
7

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관련 데이터시트

부품번호상세설명 및 기능제조사
BULD25

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Power Innovations Limited
Power Innovations Limited
BULD25D

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Power Innovations Limited
Power Innovations Limited

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