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PDF BULD85KC Data sheet ( Hoja de datos )
| Número de pieza | BULD85KC | |
| Descripción | NPN SILICON TRANSISTOR WITH INTEGRATED DIODE | |
| Fabricantes | Power Innovations Limited | |
| Logotipo |  |
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Copyright © 1997, Power Innovations Limited, UK
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
q Designed Specifically for High Frequency
Electronic Ballasts
q Integrated Fast trr Anti-Parallel Diode,
Enhancing Reliability
q Diode trr Typically 1 µs
q Tightly Controlled Transistor Storage Times
q Voltage Matched Integrated Transistor and
Diode
q Characteristics Optimised for Cool Running
q Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB’s). This range of
switching transistors has tightly controlled
storage times and an integrated fast trr anti-
parallel diode. The revolutionary design ensures
that the diode has both fast forward and reverse
recovery times, achieving the same performance
as a discrete anti-parallel diode plus transistor.
The integrated diode has minimal charge
coupling with the transistor, increasing frequency
stability, especially in lower power circuits where
the circulating currents are low. By design, this
new device offers a voltage matched integrated
transistor and anti-parallel diode.
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
device symbol
C
B
E
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (VBE = 0)
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Maximum average continuous diode forward current at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp = 10 ms, duty cycle ≤ 2%.
SYMBOL
VCES
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
IE(av)
Tj
Tstg
VALUE
600
600
400
9
6
8
2
4
70
0.5
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
W
A
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1 page  
1·0
60%
40%
20%
10%
0%
0·1
0·01
10-4
BULD85KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
LDX85CZC
TC = 25°C
duty cycle = t1/t2
Read time at end of t1,
t1
t2
TJ (max)
–
TC
=
PD (peak)
•
ZθJC
RθJC
•
RθJC (max)
10-3
10-2
10-1
100
101
102
t1 - Power Pulse Duration - s
Figure 7.
1000
0%
100
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LDX85CPA
TA = 25°C
10%
10 20%
40%
60%
1·0
10-4
10-3
10-2
10-1
100
101
102
103
t1 - Power Pulse Duration - s
Figure 8.
PRODUCT INFORMATION
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BULD85KC.PDF ] | |
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