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PDF BUP314S Data sheet ( Hoja de datos )
| Número de pieza | BUP314S | |
| Descripción | IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BUP 314S
Preliminary data
IGBT
• High switching speed
• Very low switching losses
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 314S
VCE IC
1200V 25A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Avalanche energy, single pulse
IC = 25 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
EAS
Ptot
Tj
Tstg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
C67040-A4207-A2
Values
1200
Unit
V
1200
± 20
25
17
A
50
34
mJ
65
300
-55 ... + 150
-55 ... + 150
W
°C
Semiconductor Group
1
Feb-07-1997
1 page  
BUP 314S
Preliminary data
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
55 55
A
IC 45
40
35
17V
15V
13V
11V
9V
7V
A
IC 45
40
35
17V
15V
13V
11V
9V
7V
30 30
25 25
20 20
15 15
10 10
5
0
0 2 4 6 V 10
VCE
5
0
0 2 4 6 V 10
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp=80µs,VCE=20 V
60
A
50
IC
45
40
35
30
25
20
15
10
5
0
0 2 4 6 8 10 V 14
VGE
Semiconductor Group
5
Feb-07-1997
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BUP314S.PDF ] | |
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