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PDF BUP603D Data sheet ( Hoja de datos )
| Número de pieza | BUP603D | |
| Descripción | IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BUP 603D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Type
BUP 603D
VCE IC
600V 42A
Package
TO-218 AB
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current, (limited by bond wire)
TC = 60 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Diode forward current
TC = 90 °C
Pulsed diode current, tp = 1 ms
TC = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Symbol
VCE
VCGR
VGE
IC
ICpuls
IF
IFpuls
Ptot
Tj
Tstg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
Q67040-A4230-A2
Values
600
Unit
V
600
± 20
42
32
A
104
64
31
180
200
- 55 ... + 150
- 55 ... + 150
W
°C
Semiconductor Group
1
Dec-02-1996
1 page  
BUP 603D
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
60
A
50
IC
45
40
17V
15V
13V
11V
9V
7V
35
30
25
20
15
10
5
0
0 1 2 3V5
VCE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
60
A
50
IC
45
40
17V
15V
13V
11V
9V
7V
35
30
25
20
15
10
5
0
0 1 2 3V5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
60
A
50
IC
45
40
35
30
25
20
15
10
5
0
0 2 4 6 8 10 V 14
VGE
Semiconductor Group
5
Dec-02-1996
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUP603D.PDF ] | |
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