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PDF BUPD1520 Data sheet ( Hoja de datos )

Número de pieza BUPD1520
Descripción NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Fabricantes Power Innovations Limited 
Logotipo Power Innovations Limited Logotipo



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No Preview Available ! BUPD1520 Hoja de datos, Descripción, Manual

Copyright © 1999, Power Innovations Limited, UK
BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
G Designed for Self Oscillating Inverter
Applications
G Rugged 1500 V Planar Construction
G Integral Free-Wheeling Anti-Parallel Diode
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
device symbol
C
B
E
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (IB = 0)
Collector-emitter voltage (VBE = 0)
Emitter-base voltage (IC = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTE 1: This value applies for tp = 10 ms, duty cycle 2%.
SYMBOL
VCEO
VCES
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
TL
VALUE
700
1500
11
2
2.5
2
2.5
50
-55 to +125
-55 to +150
300
UNIT
V
V
V
A
A
A
A
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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BUPD1520 pdf
BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1999, Power Innovations Limited
PRODUCT INFORMATION
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