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PDF BUS98 Data sheet ( Hoja de datos )
| Número de pieza | BUS98 | |
| Descripción | SITCHMODE Series NPN Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUS98/D
™Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
BUS98
BUS98A
30 AMPERES
The BUS98 and BUS98A transistors are designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. They are particularly
suited for line–operated switchmode applications such as:
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
(BVCEO)
• Switching Regulators
• Inverters
250 WATTS
850 – 1000 V (BVCES)
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
60 ns Inductive Fall Time – 25_C (Typ)
120 ns Inductive Crossover Time – 25_C (Typ)
Operating Temperature Range –65 to + 200_C
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
CASE 1–07
Switching Times with Inductive Loads
Saturation Voltages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Currents (125_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Overload
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation — TC = 25_C
— TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature
for Soldering Purposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎx(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
TO–204AA
Symbol
VCEO(sus)
VCEV
VEB
IC
ICM
IoI
IB
IBM
PD
TJ, Tstg
BUS98
400
850
BUS98A
450
1000
7
30
60
120
10
30
250
142
1.42
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
RθJC
TL
Max Unit
0.7 _C/W
275 _C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
SWITCHING TIMES NOTE
BUS98 BUS98A
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage wa-
veforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 – 90% Vclamp
tfi = Current Fall Time, 90 – 10% IC
tti = Current Tail, 10 – 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
]PSWT = 1/2 VCCIC(tc) f
In general, trv + tfi tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
INDUCTIVE SWITCHING
4
3
2 TC = 100°C
1
0.7
TC = 25°C
0.5
βf = 5
2
4 6 8 10
20
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Storage Time, tsv
30
0.8
0.6 TC = 100°C
0.4
0.2 TC = 100°C
0.1 TC = 25°C
tc
tfi
βf = 5
TC = 25°C
2
4 6 8 10
20 30
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Crossover and Fall Times
3
2
tsv
1
TC = 25°C
IC = 20 A
VBE(off) = 5 V
0.5
0.3 tc
0.2
0.1 tfi
0.05
0.03
2 4 6 8 10
βf, FORCED GAIN
Figure 11a. Turn–Off Times versus Forced Gain
3
2
tsv
1
TC = 25°C
IC = 20 A
βf = 5
0.5
0.3
0.2 tc
0.1 tfi
0.05
0.03
1 2 345
Ib2/Ib1
Figure 11b. Turn–Off TM Times versus Ib2/Ib1
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUS98.PDF ] | |
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