Datasheet BUT12 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BUT12	Silicon diffused power transistors DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product speciﬁcation Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product speciﬁcation Silicon diffused power transistors DESCRIPTION High-volt	NXP Semiconductors	transistor
2	BUT12	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) BUT12 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak	Wing Shing Computer Components	transistor
3	BUT12	High Voltage Power Switching Applications BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A Colle	Fairchild Semiconductor	data
4	BUT12	High Voltage Power Switching Applications BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A Colle	Fairchild Semiconductor	data
5	BUT12A	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) BUT12A GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V MIN MAX 1000 450 8 20 100 1.5 UNIT V V A A W V A V s VCESM VCE	Wing Shing Computer Components	transistor

BUT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BUT100	HIGH POWER NPN SILICON TRANSISTOR ® BUT100 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH RUGGEDNESS APPLICATION s MOTOR CONTROL s UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO	STMicroelectronics	transistor
2	BUT11	Silicon diffused power transistors DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product speciﬁcation Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product speciﬁcation Silicon diffused power transistors DESCRIPTION High-volt	NXP Semiconductors	transistor
3	BUT11	NPN SILICON POWER TRANSISTOR BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact	Power Innovations Limited	transistor
4	BUT11	NPN SILICON POWER TRANSISTOR	TRSYS	transistor
5	BUT11	NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS) BUT11/11A HIGH VOLTAGE POWER SWITCHING APPLICATIONS NPN SILICON TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current	Wing Shing Computer Components	transistor
6	BUT11	High Voltage Power Switching Applications BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A Emitter-Base	Fairchild Semiconductor	data
7	BUT11	NPN SILICON POWER TRANSISTOR BUT11 NPN SILICON POWER TRANSISTOR ● ● ● Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ra	Bourns Electronic Solutions	transistor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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