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부품번호 | BUT12AI 기능 |
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기능 | Silicon Diffused Power Transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 7 페이지수
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT12AI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited
for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Inductive fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 5 A; IB = 0.86A
ICon = 5 A; IBon = 1.0 A;Tj ≤ 100˚C
TYP.
-
-
-
-
-
-
5
MAX.
1000
450
8
20
110
1.5
-
300
UNIT
V
V
A
A
W
V
A
ns
PINNING - TO220AB
PIN DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
8
20
4
6
110
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
-
MAX.
1.15
60
UNIT
K/W
K/W
June 1997
1
Rev 1.000
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT12AI
VBEsat / V
1.2
1.1 Tj = 25 C
Tj = 125 C
1
0.9
0.8
0.7 IC/IB=
0.6 8
10
0.5 12
0.4
0.1
Fig.9.
1 10
IC / A
Typical base-emitter saturation voltage.
VBEsat = f(IC); parameter IC/IB
VCEsat / V
1
0.9
0.8 IC/IB=
12
0.7 10
0.6 8
0.5 5
0.4
Tj = 25 C
0.3 Tj = 125 C
0.2
0.1
0
0.1
1
10
IC / A
Fig.10. Typical collector-emitter saturation voltage.
VCEsat = f(IC); parameter IC/IB
VBEsat / V
1.2
Tj = 25 C
1.1 Tj = 125 C
1
0.9
IC =
0.8
6A
3A
0.7 2A
0.6
0 0.4 0.8 1.2 1.6 2 2.4
IB / A
Fig.11. Typical base-emitter saturation voltage.
VBEsat = f(IB); parameter IC
VCEsat / V
10
Tj = 25 C
Tj = 125 C
6A
1
4A
IC=2A
0.1
0.1 1 10
IB / A
Fig.12. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
June 1997
4
Rev 1.000
4페이지 Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT12AI
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
June 1997
7
Rev 1.000
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부품번호 | 상세설명 및 기능 | 제조사 |
BUT12A | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) | Wing Shing Computer Components |
BUT12A | Silicon diffused power transistors | NXP Semiconductors |
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