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PDF BUT211X Data sheet ( Hoja de datos )
| Número de pieza | BUT211X | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT211X
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope
specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Inductive fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 3.0 A; IB = 0.4 A
ICon = 3.0 A; IBon = 0.3 A
TYP.
-
-
-
-
-
-
-
MAX.
850
400
5
10
32
2.0
0.1
UNIT
V
V
A
A
W
V
µs
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heat sink
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
850
400
5
10
2
4
32
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
-
MAX.
3.95
55
UNIT
K/W
K/W
March 1996
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUT211X
h FE
100
5V
1V
10
Tj = 25 C
Tj = 125 C
1
0.01
Fig.13.
0.1
IC / A
1
10
Typical DC current gain. hFE = f(IC)
parameter VCE
IC / A
100
IC / A
6
5
4
3
2
1
0
0
200 400 600 800 1000
VCE / V
Fig.15. Reverse bias safe operating area. Tj ≤ Tj max
VCC
ICMmax
10
ICmax
1
= 0.01
II
I
0.1
tp =
10 us
100 us
500 us
2 ms
10 ms
DC
IBon
-VBB
LC
VCL
LB
T.U.T.
Fig.16. Test circuit RBSOA. VCC = 150 V; -VBB = 5 V
LC = 200 µH; VCL ≤ 850 V; LB = 1 µH
0.01
1
10 100 1000
VCE / V
Fig.14. Forward bias safe operating area. Tmb = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
March 1996
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BUT211X.PDF ] | |
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