Datasheet.kr   

BUT33 데이터시트 PDF




Motorola Inc에서 제조한 전자 부품 BUT33은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 BUT33 자료 제공

부품번호 BUT33 기능
기능 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS
제조업체 Motorola Inc
로고 Motorola  Inc 로고


BUT33 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 8 페이지수

미리보기를 사용할 수 없습니다

BUT33 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUT33/D
BUT33
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
56 AMPERES
NPN SILICON
POWER DARLINGTON
TRANSISTOR
600 VOLTS
250 WATTS
The BUT33 Darlington transistor is designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line operated SWITCHMODE applications such as:
AC and DC Motor Controls
Switching Regulators
Inverters
Solenoid and Relay Drivers
CASE 197A–05
TO–204AE
Fast Turn Off Times
800 ns Inductive Fall Time at 25_C (Typ)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2.0 µs Inductive Storage Time at 25_C (Typ)
Operating Temperature Range –65 to 200_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
Base Current — Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFree Wheel Diode Forward Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFree Wheel Diode Forward Current— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purpose
1/8from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎx(1) Pulse Test: Pulse Width=5 ms, Duty Cycle 10%.
100 16
Symbol
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
IF
IFM
PD
TJ, Tstg
Symbol
RθJC
TL
(TO–3)
BUT33
400
600
10
56
75
12
15
56
75
250
140
– 65 to + 200
Max
0.7
275
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1




BUT33 pdf, 반도체, 판매, 대치품
BUT33
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
20
5V
0
1
2
PW Varied to Attain
IC = 100 mA
220
PULSES
δ = 3%
680 pF
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7
Vclamp = VCEO(sus)
Lcoil = 180 µH
Rcoil = 0.05
VCC = 10 V
INDUCTIVE TEST CIRCUIT
TUT
1
INPUT
SEE ABOVE FOR
DETAILED CONDITIONS
2
1N4937
OR
EQUIVALENT
Vclamp
RS =
0.1
Rcoil
Lcoil
VCC
33 D1
2 W 160
100
MM3735
22 µF
D3
2N6438
+10 V
MR854
680 pF
22
Ib1 ADJUST
D1 D2 D3 D4 1N4934
680 pF
1 µF Ib2 ADJUST
22 dTb ADJUST
2N3763
100
D4 dT
MR854
160
33
2 W D3
22 µF 2N6339
VCC
OUTPUT WAVEFORMS
IC
ICM
tf Clamped
t1 tf
t
VCE VCEM
TIME
Vclamp
t
t2
t1 Adjusted to
Obtain IC
[ Lcoil (ICM)
t1 VCC
[ Lcoil (ICM)
t2 Vclamp
Test Equipment
Scope — Tektronix
475 or Equivalent
TEST CIRCUIT
for
FREE–WHEEL
DIODE
+
DRIVER
VD
ID
AV
up to
50 V
CRONETICS
PG130
up to
50 V
5 µs
1%
510
VD
ID
15
10
5
3
2
IC = 50 A
1
40°C
0.5
0.3 IC = 25 A
0.2
TC = 25°C
IC/IB = 5
0.1
1 2 3 4 5 6 7 8 9 10
Ib2/Ib1
Figure 6. Fall Time versus IB2/IB1
10
8
IC = 25 A
6
5
4 IC = 50 A
3
2 TC = 25°C
VBE(off) = 5 V
1
1 2 3 4 5 6 7 8 9 10
βf, FORCED GAIN
Figure 8. Storage Time versus Forced Gain
5
4
3
2
IC = 20 A
σ tF = 200 ns
σ tS = 400 ns
TC = 25°C
IC/IB = 20
tS
1
0.5
0.3
0.2
0.1
1
10
VBE(off) = 5 V
10 V
VBE(off) = 5 V
10 V IC/IB = 10
tF
23
5 7 10
20 30
IC, COLLECTOR CURRENT (AMPS)
50
Figure 7. Turn–Off Time versus IC
8
6 IC = 25 A
5
4
TC = 25°C
IC/IB = 5
3
IC = 50 A
2
IC = 10 A
1
1 2 3 4 5 6 7 8 9 10
Ib2/Ib1
Figure 9. Storage Time versus Ib2/Ib1
4 Motorola Bipolar Power Transistor Device Data

4페이지










BUT33 전자부품, 판매, 대치품
PACKAGE DIMENSIONS
BUT33
E
V
H
A
N
C
–T–
SEATING
PLANE
D 2 PL
K
0.30 (0.012) M T Q M Y M
U
L
–Y–
2
GB
1
–Q–
0.25 (0.010) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 1.530 REF
B 0.990 1.050
C 0.250 0.335
D 0.057 0.063
E 0.060 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N 0.760 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35 8.51
1.45 1.60
1.53 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
Motorola Bipolar Power Transistor Device Data
7

7페이지


구       성 총 8 페이지수
다운로드[ BUT33.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
BUT30

NPN TRANSISTOR POWER MODULE

STMicroelectronics
STMicroelectronics
BUT30V

NPN TRANSISTOR POWER MODULE

STMicroelectronics
STMicroelectronics

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵