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부품번호 | BUT33 기능 |
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기능 | 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS | ||
제조업체 | Motorola Inc | ||
로고 | |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUT33/D
BUT33
™Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
56 AMPERES
NPN SILICON
POWER DARLINGTON
TRANSISTOR
600 VOLTS
250 WATTS
The BUT33 Darlington transistor is designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line operated SWITCHMODE applications such as:
• AC and DC Motor Controls
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
CASE 197A–05
TO–204AE
• Fast Turn Off Times
800 ns Inductive Fall Time at 25_C (Typ)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2.0 µs Inductive Storage Time at 25_C (Typ)
• Operating Temperature Range –65 to 200_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
Base Current — Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFree Wheel Diode Forward Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFree Wheel Diode Forward Current— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purpose
1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎx(1) Pulse Test: Pulse Width=5 ms, Duty Cycle 10%.
≈ 100 ≈ 16
Symbol
VCEO(sus)
VCEV
VEB
IC
ICM
IB
IBM
IF
IFM
PD
TJ, Tstg
Symbol
RθJC
TL
(TO–3)
BUT33
400
600
10
56
75
12
15
56
75
250
140
– 65 to + 200
Max
0.7
275
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
BUT33
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
20 Ω
5V
0
1
2
PW Varied to Attain
IC = 100 mA
220
PULSES
δ = 3%
680 pF
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7 Ω
Vclamp = VCEO(sus)
Lcoil = 180 µH
Rcoil = 0.05 Ω
VCC = 10 V
INDUCTIVE TEST CIRCUIT
TUT
1
INPUT
SEE ABOVE FOR
DETAILED CONDITIONS
2
1N4937
OR
EQUIVALENT
Vclamp
RS =
0.1 Ω
Rcoil
Lcoil
VCC
33 D1
2 W 160
100
MM3735
22 µF
D3
2N6438
+10 V
MR854
680 pF
22
Ib1 ADJUST
D1 D2 D3 D4 1N4934
680 pF
1 µF Ib2 ADJUST
22 dTb ADJUST
2N3763
100
D4 dT
MR854
160
33
2 W D3
22 µF 2N6339
VCC
OUTPUT WAVEFORMS
IC
ICM
tf Clamped
t1 tf
t
VCE VCEM
TIME
Vclamp
t
t2
t1 Adjusted to
Obtain IC
[ Lcoil (ICM)
t1 VCC
[ Lcoil (ICM)
t2 Vclamp
Test Equipment
Scope — Tektronix
475 or Equivalent
TEST CIRCUIT
for
FREE–WHEEL
DIODE
+
DRIVER
–
VD
ID
AV
up to
50 V
CRONETICS
PG130
up to
50 V
5 µs
1%
510
VD
ID
15
10
5
3
2
IC = 50 A
1
40°C
0.5
0.3 IC = 25 A
0.2
TC = 25°C
IC/IB = 5
0.1
1 2 3 4 5 6 7 8 9 10
Ib2/Ib1
Figure 6. Fall Time versus IB2/IB1
10
8
IC = 25 A
6
5
4 IC = 50 A
3
2 TC = 25°C
VBE(off) = 5 V
1
1 2 3 4 5 6 7 8 9 10
βf, FORCED GAIN
Figure 8. Storage Time versus Forced Gain
5
4
3
2
IC = 20 A
σ tF = 200 ns
σ tS = 400 ns
TC = 25°C
IC/IB = 20
tS
1
0.5
0.3
0.2
0.1
1
10
VBE(off) = 5 V
10 V
VBE(off) = 5 V
10 V IC/IB = 10
tF
23
5 7 10
20 30
IC, COLLECTOR CURRENT (AMPS)
50
Figure 7. Turn–Off Time versus IC
8
6 IC = 25 A
5
4
TC = 25°C
IC/IB = 5
3
IC = 50 A
2
IC = 10 A
1
1 2 3 4 5 6 7 8 9 10
Ib2/Ib1
Figure 9. Storage Time versus Ib2/Ib1
4 Motorola Bipolar Power Transistor Device Data
4페이지 PACKAGE DIMENSIONS
BUT33
E
V
H
A
N
C
–T–
SEATING
PLANE
D 2 PL
K
0.30 (0.012) M T Q M Y M
U
L
–Y–
2
GB
1
–Q–
0.25 (0.010) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 1.530 REF
B 0.990 1.050
C 0.250 0.335
D 0.057 0.063
E 0.060 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N 0.760 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35 8.51
1.45 1.60
1.53 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197A–05
TO–204AE (TO–3)
ISSUE J
Motorola Bipolar Power Transistor Device Data
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |