® BUT90
HIGH POWER NPN SILICON TRANSISTOR
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH RUGGEDNESS
s LOW COLLECTOR EMITTER SATURATION
t(s)APPLICATIONS
cs UNINTERRUPTABLE POWER SUPPLY
us MOTOR CONTROL
ds LINEAR AND SWITCHING INDUSTRIAL
roEQUIPMENT
te PDESCRIPTION
The BUT90 is a Multiepitaxial Planar NPN
leTransistor in TO-3 package. It is intended for use
oin high frequency and efficency converters,
- Obsswitching regulators and motor control.
1
2
TO-3
(version "S")
INTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCEV Collector-Emitter Voltage (VBE = -1.5 V)
200 V
VCEO Collector-Emitter Voltage (IB = 0)
125 V
VEBO Emitter-Base Voltage (IC = 0)
10 V
IC Collector Current
50 A
ICM Collector Peak Current (tp = 10 ms)
120 A
IB Base Current
12 A
IBM Base Peak Current
(tp = 10 ms)
Ptot Total Power Dissipation at Tcase ≤ 25 oC
Tstg Storage Temperature
Tj Max Operating Junction Temperature
32
250
-65 to 200
200
A
W
oC
oC
February 2003
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BUT90
Obsolete Product(s) - Obsolete Product(s)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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