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BUV20 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUV20
기능 NPN Silicon Power Transistor
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BUV20 데이터시트, 핀배열, 회로
BUV20
SWITCHMODEt Series
NPN Silicon Power
Transistor
SWITCHMODE series NPN silicon power transistors are designed
for high speed, high current, high power applications.
High DC current gain:
hFE min = 20 at IC = 25 A
= 10 at IC = 50 A
Low VCE(sat):
VCE(sat) max. = 0.6 V at IC = 25 A
= 0.9 V at IC = 50 A
Very fast switching times:
TF = 0.25 μs at IC = 50 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmititer Voltage
CollectorBase Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitterBase Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 1.5 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(RBE = 100 Ω)
CollectorCurrent
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak (PW v 10 ms)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseCurrent continuous
Total Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎJunction Temperature
Range
Symbol
VCEO(sus)
VCBO
VEBO
VCEX
VCER
IC
ICM
IB
PD
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎto Case
θJC
BUV20 BUV60
125
160 260
7
160 260
150 260
50
60
10
250
– 65 to 200
BUV20 BUV60
0.7
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Adc
Watts
_C
Unit
_C/W
http://onsemi.com
50 AMPERES
NPN SILICON POWER
METAL TRANSISTOR
125 VOLTS, 250 WATTS
CASE 197A05
TO204AE
(TO3)
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 11
1
Publication Order Number:
BUV20/D




BUV20 pdf, 반도체, 판매, 대치품
BUV20
100
50
10
1
1 10 100125
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C. TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
2.0
IC/IB = 10
1.6
1.2 VBE(sat)
0.8
VCE(sat)
0.4
0
1 10
IC, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
100
80
60
40
20
0
100
VCE = 4 V
1 10
IC, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain
VCC = 30 V
IC/IB1 = 10
3.0 IB1 = IB2
2.0
1.0 tS
0.4 ton
0.3
0.2 tF
0 10 20 30 40 50
IC, COLLECTOR CURRENT (A)
Figure 5. Resistive Switching Performance
VCC
IB2
IB1
RC
104 μF
VCC = 30 V
RC = 0.6 Ω
RC — Non inductive resistance
Figure 6. Switching Times Test Circuit
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