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BUV20 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUV20
기능 HIGH CURRENT NPN SILICON TRANSISTOR
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BUV20 데이터시트, 핀배열, 회로
® BUV20
HIGH CURRENT NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH RUGGEDNESS
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
s SWITCHING REGULATORS
DESCRIPTION
The BUV20 is silicon Multiepitaxial Planar NPN
transistor mounted in jedec TO-3 metal case. It is
intended for use in switching and linear
applications in military and industrial equipment.
1
2
TO-3
(version "S")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCER
VCEX
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (RBE = 100)
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Power Dissipation at Tcase 25 oC
Storage Temperature
Junction Temperature
January 2000
Value
160
150
160
125
7
50
60
10
250
-65 to 200
200
Unit
V
V
V
V
V
A
A
A
W
oC
oC
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BUV20 pdf, 반도체, 판매, 대치품
BUV20
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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