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BUV48 데이터시트 PDF




Motorola Inc에서 제조한 전자 부품 BUV48은 전자 산업 및 응용 분야에서
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부품번호 BUV48 기능
기능 SWITCHMODE II Series NPN Silicon Power Transistors
제조업체 Motorola Inc
로고 Motorola  Inc 로고


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BUV48 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUV48/D
SWITCHMODE II Series
NPN Silicon Power Transistors
BUV48
BUV48A
The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications such as:
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
V(BR)CEO
850 – 1000 VOLTS
V(BR)CEX
150 WATTS
Fast Turn–Off Times
60 ns Inductive Fall Time — 25_C (Typ)
120 ns Inductive Crossover Time — 25_C (Typ)
Operating Temperature Range –65 to + 175_C
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage (VBE = –1.5 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
— Overload
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation — TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ TC = 100_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
CASE 340D–01
TO–218 TYPE
Symbol
VCEO(sus)
VCEX
VEB
IC
ICM
IOI
IB
IBM
PD
TJ, Tstg
BUV48 BUV48A
400 450
850 1000
7
15
30
60
5
20
150
75
1
– 65 to + 175
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
RθJC
TL
Max Unit
1 _C/W
275 _C
SWITCHMODE is a trademark of Motorola, Inc.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1




BUV48 pdf, 반도체, 판매, 대치품
BUV48 BUV48A
VCEO(sus)
+10 V
0
20
1
2
PW Varied to Attain
IC = 200 mA
Table 1. Test Conditions for Dynamic Performance
RBSOA AND INDUCTIVE SWITCHING
PULSES
δ = 3%
220
680 pF
33 D1
2 W 160
100
MM3735
22 µF
D3
2N6438
+10 V
MR854
680 pF
22
Ib1 ADJUST
D1 D2 D3 D4 1N4934
680 pF
0.1 µF Ib2 ADJUST
22 dTb ADJUST
2N3763
100
D4 dT
MR854
160
33
2 W D3
0.22 µF 2N6339
VCC
RESISTIVE SWITCHING
TURN–ON TIME
1
2
IB1
IB1 adjusted to
obtain the forced
hFE desired
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
Lcoil = 25 mH, VCC = 10 V
Rcoil = 0.7
Lcoil = 180 µH
Rcoil = 0.05
VCC = 20 V
Vclamp = 300 V
RB ADJUSTED TO ATTAIN DESIRED IB1
INDUCTIVE TEST CIRCUIT
TUT
1
INPUT
SEE ABOVE FOR
DETAILED CONDITIONS
2
1N4937
OR
EQUIVALENT
Vclamp
RS =
0.1
Rcoil
Lcoil
VCC
OUTPUT WAVEFORMS
IC
IC(pk)
t1 tf
VCE
VCE or
Vclamp
TIME
t2
tf Clamped
t
t
t1 Adjusted to
Obtain IC
t1
Lcoil (ICpk)
VCC
t2
Lcoil (ICpk)
VClamp
Test Equipment
Scope — Tektronix
475 or Equivalent
VCC = 300 V
RL = 83
Pulse Width = 10 µs
RESISTIVE TEST CIRCUIT
TUT
1 RL
2 VCC
IC pk VCE(pk)
90% VCE(pk) 90% IC(pk)
IC tsv trv tfi tti
VCE
IB 90% IB1
tc
10% VCE(pk)
10%
IC pk
2% IC
TIME
Figure 7. Inductive Switching Measurements
10
βf = 5
8 IC = 10 A
6
4
2
0
0 12 34 5
VBE(off), BASE–EMITTER VOLTAGE (VOLTS)
Figure 8. Peak–Reverse Current
6
4 Motorola Bipolar Power Transistor Device Data

4페이지










BUV48 전자부품, 판매, 대치품
1
D = 0.5
0.5
BUV48 BUV48A
0.2
0.2
0.1
0.1 0.05
0.05 0.02
0.02
0.01
SINGLE PULSE
RθJC(t) = r(t) RθJC
θJC = 1°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.02
0.05 0.1 0.2
0.5 1
2
5 10 20
t, TIME (ms)
50 100 200
500 1000 2000
Figure 15. Thermal Response
OVERLOAD CHARACTERISTICS
100
TC = 25°C
80
60
40 tp = 10 µs
20
BUV48A
BUV48
0 100 200 300 400 450 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Rated Overload Safe Operating Area
(OLSOA)
OLSOA
OLSOA applies when maximum collector current is limited
and known. A good example is a circuit where an inductor is
inserted between the transistor and the bus, which limits the
rate of rise of collector current to a known value. If the tran-
sistor is then turned off within a specified amount of time, the
magnitude of collector current is also known.
Maximum allowable collector–emitter voltage versus col-
lector current is plotted for several pulse widths. (Pulse width
is defined as the time lag between the fault condition and the
removal of base drive.) Storage time of the transistor has
been factored into the curve. Therefore, with bus voltage and
maximum collector current known, Figure 16 defines the
maximum time which can be allowed for fault detection and
shutdown of base drive.
OLSOA is measured in a common–base circuit (Figure 18)
which allows precise definition of collector–emitter voltage
and collector current. This is the same circuit that is used to
measure forward–bias safe operating area.
5
4
3 RBE = 100
RBE = 2.2
2 RBE = 10
1 RBE = 0
02
46
dV/dt (KV/µs)
8
Figure 17. IC = f(dV/dt)
10
500 µF
500 V
Notes:
VCE = VCC + VBE
Adjust pulsed current source
for desired IC, tp
VEE
VCC
Figure 18. Overload SOA Test Circuit
Motorola Bipolar Power Transistor Device Data
7

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