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부품번호 | BUV48 기능 |
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기능 | NPN SILICON POWER TRANSISTORS | ||
제조업체 | Power Innovations Limited | ||
로고 | |||
전체 8 페이지수
Copyright © 1997, Power Innovations Limited, UK
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
q Rugged Triple-Diffused Planar Construction
q 15 A Continuous Collector Current
q 1000 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-emitter voltage (VBE = 0 V)
RATING
Collector-emitter voltage (RBE = 10 Ω)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Non repetitive accidental peak surge current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
BUV48
BUV48A
BUV48
BUV48A
BUV48
BUV48A
SYMBOL
VCES
VCER
VCEO
IC
ICM
IB
IBM
ICSM
Ptot
Tj
Tstg
VALUE
850
1000
850
1000
400
450
15
30
4
20
55
125
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
V Gen
68 Ω
BY205-400
BY205-400
33 Ω
1 pF
1 kΩ
0.02 µ F
+5V
1 kΩ
2N2222
D45H11
RB (on)
180 µ H
vcc
TUT BY205-400
Vclamp = 400 V
270 Ω BY205-400
1 kΩ
5X BY205-400
Adjust pw to obtain IC
For IC < 6 A VCC = 50 V
For IC ≥ 6 A VCC = 100 V
2N2904
47 Ω
100 Ω
D44H11
VBE(off)
Figure 3. Inductive-Load Switching Test Circuit
A - B = tsv
B - C = trv
D - E = tfi
E - F = tti
B - E = txo
IB(on)
IB
VCE
A (90%)
C 90%
B 10%
D (90%)
Base Current
Collector Voltage
E (10%)
I C(on)
F (2%)
Collector Current
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.
B. Resistors must be noninductive types.
Figure 4. Inductive-Load Switching Waveforms
PRODUCT INFORMATION
4
4페이지 BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
ø 4,1
4,0
15,2
14,7
3,95
4,15
4,90
4,70
1,37
1,17
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1
1,30
1,10
23
11,1
10,8
2,50 TYP.
0,78
0,50
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT INFORMATION
MDXXAW
7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ BUV48.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |