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PDF BUV48A Data sheet ( Hoja de datos )
| Número de pieza | BUV48A | |
| Descripción | SITCHMODE II Series NPN Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUV48/D
SWITCHMODE II Series
NPN Silicon Power Transistors
The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power
switching in inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
60 ns Inductive Fall Time — 25_C (Typ)
120 ns Inductive Crossover Time — 25_C (Typ)
Operating Temperature Range – 65 to + 175_C
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125_C)
BUV48
BUV48A
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
V(BR)CEO
850 – 1000 VOLTS
V(BR)CEX
150 WATTS
CASE 340D–02
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage (VBE = –1.5 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorCurrent — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
— Overload
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseCurrent — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation — TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ TC = 100_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
TO–218 TYPE
Symbol
VCEO(sus)
VCEX
VEB
IC
ICM
IOI
IB
IBM
PD
TJ, Tstg
BUV48 BUV48A
400 450
850 1000
7
15
30
60
5
20
150
75
1
– 65 to + 175
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
RθJC
TL
Max Unit
1 _C/W
275 _C
SWITCHMODE is a trademark of Motorola, Inc.
REV 8
©MMoototorroollaa, IBncip. 1o9la96r Power Transistor Device Data
1
1 page  
SWITCHING TIMES NOTE
BUV48 BUV48A
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 – 90% Vclamp
tfi = Current Fall Time, 90 – 10% IC
tti = Current Tail, 10 – 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
]PSWT = 1/2 VCCIC(tc) f
In general, trv + tfi tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
INDUCTIVE SWITCHING
5
3
2
TC = 100°C
1 TC = 25°C
0.7
0.5
0.3
0.2
βf = 5
0.1
1
23
5 7 10
20 30
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Storage Time, tsv
50
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
1
TC = 100°C
TC = 100°C
TC = 25°C
TC = 25°C
tc
tfi
βf = 5
23
5 7 10
20
IC, COLLECTOR CURRENT (AMPS)
30
Figure 10. Crossover and Fall Times
50
3
2 tsv
1
0.5
0.3
0.2
tc
0.1 tfi
0.05
0.03
0.02
0.01
0
1
23
45
TC = 25°C
IC = 10 A
VBE(off) = 5 V
6 7 8 9 10
βf, FORCED GAIN
Figure 11a. Turn–Off Times versus Forced Gain
3
2 TC = 25°C
1
IC = 10 A
tsv βf = 5 V
0.5
0.3
0.2
0.1 tc
0.05 tfi
0.03
0.02
0.01
0
1 23 4 5 6 7 8 9
Ib2/Ib1
Figure 11b. Turn–Off Times versus Ib2/Ib1
10
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUV48A.PDF ] | |
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