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PDF BUW13AF Data sheet ( Hoja de datos )
| Número de pieza | BUW13AF | |
| Descripción | Silicon diffused power transistors | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BUW13F; BUW13AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
1 page  
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13F; BUW13AF
SYMBOL
PARAMETER
CONDITIONS
tf fall time
BUW13F
BUW13AF
ICon = 10 A; IB = 2 A;
VCL = 250 V; Tc = 100 °C
ICon = 8 A; IB = 1.6 A;
VCL = 300 V; Tc = 100 °C
Note
1. Measured with a half-sinewave voltage (curve tracer).
MIN. TYP. MAX. UNIT
− 200 300 ns
− 200 300 ns
handbook1,2h0alfpage
Ptot max
(%)
80
MGK674
40
0
0 50 100 Th (oC) 150
Fig.2 Power derating curve.
handbook,2h0alfpage
IC
(A)
10
MGB896
BUW13F
BUW13AF
0
0 400 800 VCE (V) 1200
Tc ≤ 100 °C; VBE = −1 to −5 V.
Fig.3 Reverse bias SOAR.
1997 Aug 13
5
5 Page 
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13F; BUW13AF
PACKAGE OUTLINE
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads (in-line)
SOT199
E
E1
mP
q
D
A
A1
α
b1
L
L1
1 23
eb
e1
wM
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 c D E E1 e e1 L L1(1) m P Q q w α
mm
5.2
4.8
3.4
3.0
1.2
1.0
2.1
1.9
0.6
0.5
21.5 15.3 7.8
20.5 14.7 6.8
5.45
10.9
16.5
15.7
3.7
3.3
0.8
0.6
3.3
3.1
2.1
1.9
6.2
5.8
0.4
45°
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
SOT199
ISSUE DATE
97-06-27
1997 Aug 13
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BUW13AF.PDF ] | |
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