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PDF BUX10 Data sheet ( Hoja de datos )

Número de pieza BUX10
Descripción HIGH POWER NPN SILICON TRANSISTOR
Fabricantes STMicroelectronics 
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No Preview Available ! BUX10 Hoja de datos, Descripción, Manual

® BUX10
HIGH POWER NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
APPLICATIONS
s MOTOR CONTROL
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX10 is a silicon Multi-Epitaxial Planar
NPN transistor in Jedec TO-3 metal case,
intended for use in switching and linear
applications in military and industrial equipment.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (VBE = - 1.5V)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
Collector Peak Current (tP < 10 ms)
Base Current
Total Power Dissipation at Tcase
Storage Temperature
25 oC
Max Operating Junction Temperature
March 2003
Value
160
160
125
7
25
30
5
150
-65 to 200
200
Unit
V
V
V
V
A
A
A
W
oC
oC
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BUX10 pdf
BUX10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
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