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PDF BUX39 Data sheet ( Hoja de datos )
| Número de pieza | BUX39 | |
| Descripción | HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUX39 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SEME
LAB
BUX39
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
12
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
FEATURES
m• Fast Turn-On Time – 1 s @ IC = 15A
• High Current Capability
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–204AA (TO–3)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
Applications
The BUX39 is an epitaxial silicon NPN planar
transistor that has high current and high power han-
dling capability and high switching speed.
This device is especially suitable for switching–control
amplifiers, power gates, switching regulators, power-
switching circuits converters, inverters and control cir-
cuits.Other recommended applications include
DC–RF amplifiers and power oscillators.
The BUX39 is in SEMELAB’s maintenance series
and is NOT recommended for new designs.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
120V
VCEX
VCER
Collector – Emitter Sustaining Voltage
Collector – Emitter Voltage
@ VBE = –1.5V
W@ RBE = 100
120V
110V
VCEO(sus) Collector – Emitter Sustaining Voltage
90V
VEBO
Emitter – Base Voltage
7V
IC Collector Current
30A
ICM Peak Collector Current
40A
IB Base Current
6A
Ptot Total Power Dissipation
120W
Derate above 25°C
0.68 W / °C
Tstg, Tj
TL
Maximum Junction and Storage Temperature Range
³Lead Temperature 1/32 inch (0.8 mm) for 10 sec. max.
–65 to 100°C
230°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 3/94
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUX39.PDF ] | |
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