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PDF BUX82 Data sheet ( Hoja de datos )
| Número de pieza | BUX82 | |
| Descripción | HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUX82 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BUX82
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
12
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO–204AA (TO–3)
PIN 1 — Base
PIN 2 — Emitter Case is Collector.
Applications
The BUX82 is an epitaxial silicon NPN planar
transistor that has high current and high power
handling capability and high switching speed.
This device is especially suitable for
switching–control amplifiers, power gates, switch-
ing regulators, power-switching circuits convert-
ers, inverters and control circuits.Other recom-
mended applications include DC–RF amplifiers
and power oscillators.
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated)
VCESM
VCER
Collector – Emitter Voltage
Collector – Emitter Voltage
VBE = 0
WRBE = 100
VCEO
Collector – Emitter Voltage(open base)
IC Collector Current (d.c)
ICM Peak Collector Current
tp = 2ms
IB Base Current (d.c)
Ptot Total Power Dissipation Tmb = 50°C
TSTG
Storage Temperature Range
TJ Maximum Junction Temperature
800V
500V
400V
6A
8A
2A
60W
-65 to +150°C
+150°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim.9/99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUX82.PDF ] | |
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