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부품번호 | BUX84 기능 |
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기능 | NPN SILICON POWER TRANSISTOR | ||
제조업체 | Power Innovations Limited | ||
로고 | |||
전체 7 페이지수
Copyright © 1997, Power Innovations Limited, UK
BUX84
NPN SILICON POWER TRANSISTOR
AUGUST 1978 - REVISED MARCH 1997
q 40 W at 25°C Case Temperature
q 2 A Continuous Collector Current
q 3 A Peak Collector Current
q Typical tf = 200 ns at 25°C
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
SYMBOL
VCBO
VCES
VCEO
IC
ICM
Ptot
Tj
Tstg
VALUE
800
800
400
2
3
40
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BUX84
NPN SILICON POWER TRANSISTOR
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
TCP741AJ
VCE = 5 V
TC = 25°C
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
10
VCE = 800 V
TCP741AK
VBE = 0
1·0
10 0·1
0·01
1·0
0·1
1·0
IC - Collector Current - A
Figure 3.
0·001
5·0 -60 -30 0 30 60 90 120 150
TC - Case Temperature - °C
Figure 4.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAP770AB
10
1·0
0·1
0.01
1·0
10 100
VCE - Collector-Emitter Voltage - V
Figure 5.
1000
PRODUCT INFORMATION
4
4페이지 BUX84
NPN SILICON POWER TRANSISTOR
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
7
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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