|
|
|
부품번호 | BUX87P 기능 |
|
|
기능 | Silicon Diffused Power Transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 6 페이지수
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUX86P
BUX87P
GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCESM
VCEO
VCESAT
IC
ICM
Ptot
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector-emitter saturation voltage
Collector current (DC)
Collector current peak value
Total power dissipation
Fall time
CONDITIONS
VBE = 0 V
IC = 0.2 A; IB = 20 mA
Tmb ≤ 25 ˚C
IC = 0.2 A; IB(on) = 20 mA
TYP.
BUX
-
-
-
-
-
-
0.28
MAX.
86P 87P
800 1000
400 450
1
0.5
1
42
-
UNIT
V
V
V
A
A
W
µs
PINNING - SOT82
PIN DESCRIPTION
1 emitter
2 collector
3 base
PIN CONFIGURATION
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
BUX
VCESM
VCEO
VEBO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current (peak value) tp = 2 ms
Base current (DC)
Base current (peak value)
Reverse base current (peak value)1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 25 ˚C
-
-
-
-
-
-
-
-
-
-40
-
MAX.
86P 87P
800 1000
400 450
5
0.5
1
0.2
0.3
0.3
42
150
150
UNIT
V
V
V
A
A
A
A
A
W
˚C
˚C
1 Turn-off current.
November 1995
1
Rev 1.100
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUX86P
BUX87P
hFE
1000 VCE=5V
Tj=25 C
100
BUX86P
Typical gain
Limit gain
10
1
0.001
0.01
IC / A
0.1
1
Fig.7. Typical DC current gain.
hFE = f(IC); parameter VCE.
Arrows indicate conditions protected by 100% test.
hFE
1000
VCE=5V
Tj=95 C
100
BUX86P
Typical gain
Limit gain
10
1
0.001
0.01
IC / A
0.1
Fig.8. Typical DC current gain.
hFE = f(IC); parameter VCE
1
hFE
1000
VCE=5V
Tj= -40 C
BUX86P
Typical gain
Limit gain
100
IC / A
10
1 ICM max
IC max
0.1
0.01
BUX87P
= 0.01
II tp =
1 ms
I 10 ms
DC
0.001
10 100 1000
VCE / V
Fig.10. Forward bias safe operating area. Tmb = 25 ˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
10
1
0.001
0.01
IC / A
0.1
Fig.9. Typical DC current gain.
hFE = f(IC); parameter VCE
1
November 1995
4
Rev 1.100
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ BUX87P.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BUX87 | NPN SILICON HIGH VWLTAGE SWITCHING TRANSISTORS | Siemens Semiconductor Group |
BUX87 | Trans GP BJT NPN 450V 0.5A 3-Pin(3+Tab) SOT-32 Tube | New Jersey Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |