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Datasheet BUY69A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BUY69A | Transistor Transistor
High voltage power switch. Designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application
Features:
• Collector-emitter sustaining voltage - 100 mA • VCEO (sus) = 400 V (minimum) • Optimum drive condition curves
TO-3
Pi |  Multicomp | transistor |
| 2 | BUY69A | NPN Silicon Power Transistor |  Texas | transistor |
| 3 | BUY69A | HIGH VOLTAGE NPN SILICON TRANSISTOR
®
BUY69A
HIGH VOLTAGE NPN SILICON TRANSISTOR
s s s s s s
STM PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH POWER TO-3 PACKAGE
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV s SWITCHING REGULATORS DESCRIPTIO |  STMicroelectronics | transistor |
| 4 | BUY69A | Power Transistor A
A
|  Mospec Semiconductor | transistor |
| 5 | BUY69A | HIGH VOLTAGE NPN SILICON TRANSISTOR
®
BUY69A
HIGH VOLTAGE NPN SILICON TRANSISTOR
s s s s s s
STM PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH POWER TO-3 PACKAGE
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV s SWITCHING REGULATORS DESCRIPTIO | STMicroelectronics | transistor |
BUY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BUY18S | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BUY18S
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) ma  Seme LAB data | | |
| 2 | BUY24 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY24
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V@ IC= 5A
APPLICATIONS ·Designed for use switching and general purpose applications.
 Inchange Semiconductor transistor | | |
| 3 | BUY24 | SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR BUY24
MECHANICAL DATA Dimensions in mm (inches)
SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
FEATURES
• CECC SCREENING OPTIONS
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
Seme LAB transistor | | |
| 4 | BUY24 | Trans GP BJT NPN 60V 5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor data | | |
| 5 | BUY25CS12K-01 | HiRel RadHard Power-MOS Data Sheet BUY25CS12K-01 HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad app  Infineon data | | |
| 6 | BUY25CS12K-11 | HiRel RadHard Power-MOS Data Sheet BUY25CS12K-01 HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad app Infineon data | | |
| 7 | BUY25CS45B-01 | HiRel RadHard Power-MOS Data Sheet BUY25CS45B-01 HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad app Infineon data | |
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