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Número de pieza | BUZ102 | |
Descripción | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ102 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! BUZ 102
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Type
BUZ 102
VDS
50 V
ID
42 A
RDS(on)
0.023 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 111 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 42 A, VDD = 25 V, RGS = 25 Ω
L = 102 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 42 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1351-A2
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
42
Unit
A
168
mJ
180
kV/µs
6
± 20
200
-55 ... + 175
-55 ... + 175
≤ 0.83
≤ 75
E
55 / 175 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 page BUZ 102
Power dissipation
Ptot = ƒ(TC)
220
W
Ptot 180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 3
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
45
A
ID 35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 °C 180
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 0
A
I
D
10 2
/ID
= V DS
R DS(on)
10 1
10 0
10 0
10 1
Semiconductor Group
tp = 30.0µs
100 µs
1 ms
10 ms
DC
V 10 2
VDS
K/W
Z
thJC
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
5 07/96
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BUZ102.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ10 | N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET | STMicroelectronics |
BUZ10 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ10 | Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 | New Jersey Semiconductor |
BUZ100 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) | Siemens Semiconductor Group |
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