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PDF BUZ103SL-4 Data sheet ( Hoja de datos )
| Número de pieza | BUZ103SL-4 | |
| Descripción | SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Logic level
• Avalanche-rated
• dv/dt rated
Preliminary data
BUZ 103SL-4
Type
VDS
BUZ 103SL-4 55 V
ID
4.8 A
RDS(on)
0.055 Ω
Package
P-DSO-28
Ordering Code
C67078-S. . . .- . .
Maximum Ratings
Parameter
Continuous drain current one channel active
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
ID = 4.8 A, VDD = 25 V, RGS = 25 Ω
L = 12 mH, Tj = 25 °C
Reverse diode dv/dt
IS = 4.8 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation ,one channel active
TA = 25 °C
Operating temperature
Storage temperature
IEC climatic category, DIN IEC 68-1
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
Values
4.8
Unit
A
19.2
mJ
140
kV/µs
6
± 14
2.4
-55 ... + 175
-55 ... + 175
55 / 175 / 56
V
W
°C
Semiconductor Group
1
05/Sep/1997
1 page  
Preliminary data
BUZ 103SL-4
Power dissipation
Ptot = ƒ(TA)
2.8
W
2.4
Ptot 2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 °C 180
TA
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 5 V
5.0
A
ID 4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 140 °C 180
TA
Safe operating area
ID = ƒ(VDS)
parameter: D = 0, TC = 25°C
10 2
A
/I D
= V DS
R DS(on)
ID 10 1
tp = 1.4ms
10 ms
Transient thermal impedance
Zth JA = ƒ(tp)
parameter: D = tp / T
10 2
K/W
10 1
ZthJC 10 0
10 -1
10 0
10 -1
DC
10 -2
10 0
10 1
Semiconductor Group
V 10 2
VDS
5
10 -2
10 -3
10 -4
10 -5
D = 0.50
0.20
0.10
0.05
0.02
0.01
single pulse
10 -6
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2 10 -1s 10 0
tp
05/Sep/1997
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUZ103SL-4.PDF ] | |
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