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PDF BUZ20 Data sheet ( Hoja de datos )

Número de pieza BUZ20
Descripción 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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No Preview Available ! BUZ20 Hoja de datos, Descripción, Manual

Semiconductor
Data Sheet
BUZ20
October 1998 File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power
Features
[ /Title
(BUZ20
)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
• 12A, 100V
• rDS(ON) = 0.200
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(12A, transistors requiring high speed and low gate drive power.
100V, This type can be operated directly from integrated circuits.
0.200 Formerly developmental type TA17411.
Ohm, N-
Channel Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
Power
MOS-
PART NUMBER
PACKAGE
BUZ20
TO-220AB
BRAND
BUZ20
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
FET)
NOTE: When ordering, use the entire part number.
Symbol
/Author
()
D
/Key-
words
G
(Harris
Semi-
S
conduc-
tor, N-
Channel Packaging
Power
MOS-
JEDEC TO-220AB
FET,
TO-
220AB)
/Creator
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
Outlines
/DOC-
VIEW
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998

1 page




BUZ20 pdf
BUZ20
Typical Performance Curves Unless Otherwise Specified (Continued)
102
PULSE DURATION = 80µs
15
ID = 18A
101
TJ = 150oC
TJ = 25oC
100
10
5
VDS = 20V
VDS = 80V
10-1
0
0.5 1.0 1.5 2.0 2.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
3.0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
RL
+
RG
VDD
-
DUT
VGS
FIGURE 14. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50k
0.3µF
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 16. GATE CHARGE TEST CIRCUIT
5
0
0 10 20 30 40
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
Ig(REF)
0
FIGURE 17. GATE CHARGE WAVEFORMS

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