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Datasheet BUZ21 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BUZ21 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 21
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 21
VDS
100 V
ID
21 A
RDS(on)
0.085 Ω
Package TO-220 AB
Ordering Code C67078-S1308-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 21 Unit A
ID | Siemens Semiconductor Group | transistor |
2 | BUZ21 | 19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFET BUZ21
Semiconductor
Data Sheet
October 1998
File Number 2420.1
19A, 100V, 0.100 Ohm, N-Channel Power MOSFET
Features
• 19A, 100V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.100Ω (BUZ21) field effect transistor designed for applications such as • SOA | Intersil Corporation | mosfet |
3 | BUZ21 | SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 21
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 21
100 V
21 A
0.085 Ω
TO-220 AB
C67078-S1308-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current | Infineon Technologies AG | transistor |
4 | BUZ210 | (BUZ210 / BUZ211) Power Transistors w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
.D
a t a
e h S
t e
U 4
.c
m o
w
w w
a .D
S a t
e e h
U 4 t
m o .c
| Siemens | transistor |
5 | BUZ211 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ211
DESCRIPTION ·Static Drain-Source On-Resistance
: RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited
APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers | Inchange Semiconductor | mosfet |
BUZ Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BUZ10 | N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET ®
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07 Ω
ID 23 A
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT, H STMicroelectronics mosfet | | |
2 | BUZ10 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 10
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10
VDS
50 V
ID
23 A
RDS(on)
0.07 Ω
Package TO-220 AB
Ordering Code C67078-S1300-A2
Maximum Ratings Parameter Continuous drain current Symbol Valu Siemens Semiconductor Group transistor | | |
3 | BUZ10 | Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor mosfet | | |
4 | BUZ100 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S
VDS
50 V
ID
60 A
RDS(on)
0.018 Ω
Package TO-220 AB
Orde Siemens Semiconductor Group transistor | | |
5 | BUZ100L | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) BUZ 100L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S
Type BUZ 100L
VDS
50 V
ID
60 A
RDS(on)
0.018 Ω
Pac Siemens Semiconductor Group transistor | | |
6 | BUZ100S | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) BUZ 100 S
SPP77N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 77 A
RDS(on) 0.015 Ω
Package
Ordering Code
BUZ 100 S
TO-220 AB
Q67 Siemens Semiconductor Group transistor | | |
7 | BUZ100SL | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) BUZ 100 SL
SPP70N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 70 A
RDS(on) 0.018 Ω
Package
Ordering Code
BUZ 100 Siemens Semiconductor Group transistor | |
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