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PDF BUZ341 Data sheet ( Hoja de datos )
| Número de pieza | BUZ341 | |
| Descripción | SIPMOS Power Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ341 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 341
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 341
VDS
200 V
ID
33 A
RDS(on)
0.07 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 28 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 33 A, VDD = 50 V, RGS = 25 Ω
L = 1.09 mH, Tj = 25 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Data Sheet
1
Ordering Code
C67078-S3128-A2
Values
33
132
33
16
Unit
A
mJ
790
± 20
170
-55 ... + 150
-55 ... + 150
≤ 0.74
75
E
55 / 150 / 56
V
W
˚C
K/W
05.99
1 page  
BUZ 341
Power dissipation
Ptot = ƒ(TC)
180
W
Ptot 140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 ˚C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25˚C
10 3
A
ID 10 2
10 1
/ID
= V DS
R DS(on)
tp = 350.0ns
1 µs
10 µs
100 µs
1 ms
10 ms
10 0
DC
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
34
A
28
ID
24
20
16
12
8
4
0
0 20 40 60 80 100 120 ˚C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 0
K/W
ZthJC
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -1
10 0
Data Sheet
10 1
10 2 V
VDS
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
5 05.99
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUZ341.PDF ] | |
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