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Número de pieza | BUZ42 | |
Descripción | 4A/ 500V/ 2.000 Ohm/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ42 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Semiconductor
Data Sheet
BUZ42
October 1998 File Number 2417.1
4A, 500V, 2.000 Ohm, N-Channel Power
Features
[ /Title
(BUZ42
)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 4A, 500V
• rDS(ON) = 2.000Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(4A,
transistors requiring high speed and low gate drive power.
500V, This type can be operated directly from integrated circuits.
2.000 Formerly developmental type TA17415.
Ohm, N-
Channel Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
Power
MOS-
PART NUMBER
PACKAGE
BUZ42
TO-220AB
BRAND
BUZ42
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
FET)
NOTE: When ordering, use the entire part number.
Symbol
/Author
()
D
/Key-
words
G
(Harris
Semi-
S
conduc-
tor, N-
Channel Packaging
Power
MOS-
JEDEC TO-220AB
FET,
TO-
220AB)
SOURCE
DRAIN
GATE
/Creator
()
DRAIN (FLANGE)
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
Outlines
/DOC-
VIEW
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 page BUZ42
Typical Performance Curves Unless Otherwise Specified (Continued)
102
PULSE DURATION = 80µs
15
ID = 6.8A
101 TJ = 150oC
TJ = 25oC
100
10
5
VDS = 100V
VDS = 400V
10-1
0
0.5 1.0 1.5 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.5
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
0
0 10 20 30 40
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
RL
+
RG
VDD
-
DUT
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet BUZ42.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ40 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ40B | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ41A | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
BUZ41A | 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
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