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PDF BUZ50A Data sheet ( Hoja de datos )
| Número de pieza | BUZ50A | |
| Descripción | HIGH VOLTAGE POWER MOSFET N-CHANNEL | |
| Fabricantes | ETC | |
| Logotipo |  |
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PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE: TO-220AB
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
Drain – Gate Voltage
Drain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature From Case
VDSS
VDGR
ID
ID M
VGS
PD
IL
TJ & Tstg
TL
ELECTRICAL CHARACTERISTICS TA @ 25°C
Parameters
Symbol Test Conditions
Drain Source
Breakdown Voltage
BVDSS VGS = 0V, ID = .25mA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1.0mA
Gate – Body Leakage
Current
Zero Gate Voltage
Drain Current
On State Drain Current
IGSS
IDSS
ID(on)
VGS = ± 20V, VDS = 0V
VDS = 1000V, VGS = 0V,
VDS = 1000V, VGS = 0V, TJ = 125°C
Drain Source On-
Resistance
Forward
Transconductance
Drain-Source On
Voltage
Drain-Source-On
Voltage
Input Capacitance
rDS(on) VGS = 10V, ID = 1.5A
gFS VDS = 25V, ID = 1.5A
VDS(on)
VDS(on)
Ciss
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1 MHz
Reverse Transfer
Capacitance
Crss
TYPE: BUZ50A
1000
1000
2.5
10
±20
75
-55 to +150
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
Min Typ Max Unit
1000
Vdc
2.1 4.0 Vdc
100 nA
0.25 mA
1.0 mA
Adc
5.0 Ohms
0.7 mhos
Vdc
Vdc
2100 pF
120 pF
50 pF
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BUZ50A.PDF ] | |
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