BUZ50C Datasheet PDF - Siemens Semiconductor Group
| Part Number | BUZ50C | |
| Description | SIPMOS Power Transistor (N channel Enhancement mode) | |
| Manufacturers | Siemens Semiconductor Group | |
| Logo |  |
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There is a preview and BUZ50C download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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SIPMOS ® Power Transistor
• N channel
• Enhancement mode
BUZ 50 C
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 50 C
VDS
ID
1000 V 2.3 A
RDS(on)
6Ω
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Ordering Code
C67078-A1307-A5
Symbol
VDS
VDGR
ID
IDpuls
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
1000
Unit
V
1000
2.3
A
9
± 20
V
W
78
-55 ... ...+ 150 °C
-55 ... ...+ 150
≤ 1.6
K/W
75
C
55 / 150 / 56
Semiconductor Group
1
07/96
|
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BUZ 50 C
Power dissipation
Ptot = ƒ(TC)
80
W
Ptot
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
A
I
D 10 1
10 0
10 -1
I
V
R
tp = 730.0ns
1 µs
10 µs
100 µs
1 ms
10 ms
DC
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
2.4
A
2.0
ID
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -2
10 0
10 1
Semiconductor Group
10 2 V 10 3
VDS
5
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
07/96
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUZ50C electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUZ50C.PDF Datasheet ] | |
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