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PDF BUZ60B Data sheet ( Hoja de datos )

Número de pieza BUZ60B
Descripción main ratings
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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Semiconductor
Data Sheet
BUZ60
October 1998 File Number 2260.1
5.5A, 400V, 1.000 Ohm, N-Channel Power
Features
[ /Title
(BUZ60
)
/Sub-
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 5.5A, 400V
• rDS(ON) = 1.000
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
ject
(5.5A,
400V,
1.000
Ohm,
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17414.
Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
N-Chan- PART NUMBER
PACKAGE
nel BUZ60
TO-220AB
BRAND
BUZ60
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Power NOTE: When ordering, use the entire part number.
Symbol
MOS-
FET)
D
/Author
() G
/Key-
words
S
(Harris
Semi-
conduc- Packaging
tor, N-
Chan-
JEDEC TO-220AB
nel
Power
MOS-
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
FET,
TO-
220AB)
/Cre-
ator ()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998

1 page




BUZ60B pdf
BUZ60
Typical Performance Curves Unless Otherwise Specified (Continued)
102
PULSE DURATION = 80µs
15
ID = 8.3A
101
TJ = 150oC
100
TJ = 25oC
10
5
VDS = 80V
VDS = 320V
10-1
0
0.5 1.0 1.5 2.0 2.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
3.0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
RL
+
RG
VDD
-
DUT
VGS
FIGURE 14. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50k
0.3µF
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 16. GATE CHARGE TEST CIRCUIT
5
0 0 10 20 30 40 50
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
Ig(REF)
0
FIGURE 17. GATE CHARGE WAVEFORMS

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