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Data Sheet
BUZ71A
June 1999
File Number 2419.2
13A, 50V, 0.120 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ71A
TO-220AB
BUZ71A
NOTE: When ordering, use the entire part number.
Features
• 13A, 50V
• rDS(ON) = 0.120Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-17
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
BUZ71A
Typical Performance Curves Unless Otherwise Specified (Continued)
102
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
15
ID = 18A
101
TJ = 150oC
TJ = 25oC
10
100 5
VDS = 10V
VDS = 40V
10-1
0
0.5 1.0 1.5 2.0 2.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
3.0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
RL
+
RG
VDD
-
DUT
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
00 5 10 15 20 25
Qg, GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
4-21