|
|
PDF BUZ73A Data sheet ( Hoja de datos )
| Número de pieza | BUZ73A | |
| Descripción | 5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BUZ73A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
Semiconductor
Data Sheet
BUZ73A
October 1998 File Number 2263.1
5.8A, 200V, 0.600 Ohm, N-Channel Power
Features
[ /Title
(BUZ73
A)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 5.8A, 200V
• rDS(ON) = 0.600Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(5.8A, transistors requiring high speed and low gate drive power.
200V, This type can be operated directly from integrated circuits.
0.600 Formerly developmental type TA4600.
Ohm, N-
Channel Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
Power
MOS-
PART NUMBER
PACKAGE
BUZ73A
TO-220AB
BRAND
BUZ73A
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
FET)
NOTE: When ordering, use the entire part number.
Symbol
/Author
()
D
/Key-
words
G
(Harris
Semi-
S
conduc-
tor, N-
Channel Packaging
Power
MOS-
JEDEC TO-220AB
FET,
TO-
220AB)
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
/Creator
()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
1 page  
BUZ73A
Typical Performance Curves Unless Otherwise Specified (Continued)
102
PULSE DURATION = 80µs
15
ID = 10.5A
101 10
100 TJ = 150oC
TJ = 25oC
5
VDS = 40V
VDS = 160V
10-1
0
0.5 1.0 1.5 2.0 2.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
3.0
FIGURE 29. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
RL
+
RG
VDD
-
DUT
VGS
FIGURE 31. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
VDS
(ISOLATED
SUPPLY)
12V
BATTERY
0.2µF 50kΩ
0.3µF
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
ID CURRENT
SAMPLING
SAMPLING
RESISTOR
RESISTOR
FIGURE 33. GATE CHARGE TEST CIRCUIT
5
00 5 10 15 20 25
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 30. GATE TO SOURCE VOLTAGE vs GATE CHARGE
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 32. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
Qg(TOT)
Qgd
VGS
VDS
0
Ig(REF)
0
FIGURE 34. GATE CHARGE WAVEFORMS
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BUZ73A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUZ73 | SIPMOS Power Transistor |  Siemens Semiconductor Group |
| BUZ73 | SIPMOS Power Transistor |  Infineon Technologies AG |
| BUZ73A | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
| BUZ73A | 5.8A/ 200V/ 0.600 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |