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PDF BS809 Data sheet ( Hoja de datos )
| Número de pieza | BS809 | |
| Descripción | DMOS Transistors (N-Channel) | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BS809 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BS809
DMOS Transistors (N-Channel)
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
Top View
12
.037(0.95) .037(0.95)
FEATURES
♦ High input impedance
♦ Low gate threshold voltage
♦ Low drain-source ON resistance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
Marking
S09
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage (pulsed)
Drain Current (continuous) at TSB = 50 °C
Power Dissipation at TSB = 50 °C
Junction Temperature
Storage Temperature Range
1) Device on fiberglass substrate, see layout
Symbol
VDSS
VDGS
VGS
ID
Ptot
Tj
TS
Value
400
400
±20
100
3101)
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Inverse Diode
Max. Forward Current (continuous) at Tamb = 25 °C
Forward Voltage Drop (typ.)at VGS = 0, IF = 0.3 A, Tj = 25 °C
4/98
Symbol
IF
VF
Value
300
1.0
Unit
mA
V
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BS809.PDF ] | |
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