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PDF BSC042N03S Data sheet ( Hoja de datos )
| Número de pieza | BSC042N03S | |
| Descripción | OptiMOS2 Power-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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OptiMOS®2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt rated
Product Summary
V DS
R DS(on),max
ID
BSC042N03S
30 V
4.2 mΩ
50 A
P-TDSON-8
Type
BSC042N03S
Package
P-TDSON-8
Ordering Code
Q67042-S4220
Marking
42N03S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=45 K/W2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
I D,pulse
E AS
dv /dt
T C=25 °C3)
I D=50 A, R GS=25 Ω
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=45 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.2
page 1
Value
50
50
20
200
280
6
±20
62.5
2.8
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
2004-04-13
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
160
10 V 4.5 V
140
120
100
80
60
40
20
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
BSC042N03S
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
25
3.2 V
3.4 V
3.7 V
4 V 20 3 V
3.7 V
2.8 V
15
3.4 V
10
3.2 V
3V
2.8 V
3
5
0
0 20 40 60
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
4V
4.5 V
10 V
80 100
120
140
100
120
80
100
80 60
60
40
20
150 °C
25 °C
40
20
0
012345
V GS [V]
0
0 10 20 30 40 50 60
I D [A]
Rev. 1.2
page 5
2004-04-13
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC042N03S.PDF ] | |
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