BSM150GAL120DN2 Datasheet PDF - Siemens Semiconductor Group
| Part Number | BSM150GAL120DN2 | |
| Description | IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) | |
| Manufacturers | Siemens Semiconductor Group | |
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BSM 150 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
VCE IC
Package
Ordering Code
BSM 150 GAL 120 DN2 1200V 210A HALF BRIDGE GAL 2 C67076-A2013-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
RTHJCDC
Vis
-
-
-
-
Values
1200
Unit
V
1200
± 20
210
150
A
420
300
1250
+ 150
-55 ... + 150
≤ 0.1
≤ 0.25
≤ 0.18
2500
20
11
F
55 / 150 / 56
W
°C
K/W
Vac
mm
-
Semiconductor Group
1
Mar-29-1996
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BSM 150 GAL 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420g
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BSM150GAL120DN2 electronic component. |
| Information | Total 5 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BSM150GAL120DN2.PDF Datasheet ] | |
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