|
|
PDF BSM150GB170DN2E3166 Data sheet ( Hoja de datos )
| Número de pieza | BSM150GB170DN2E3166 | |
| Descripción | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSM150GB170DN2E3166 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
BSM150GB170DN2 E3166
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• RG on,min = 10 Ohm
Type
VCE IC
Package
BSM150GB170DN2 E3166 1700V 220A HALF-BRIDGE 2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67070-A2709-A67
Values
1700
Unit
V
1700
± 20
220
150
A
440
300
1250
+ 150
-55 ... + 150
≤ 0.1
≤ 0.21
4000
20
11
F
55 / 150 / 56
W
°C
K/W
Vac
mm
-
Semiconductor Group
1
Aug-01-1996
1 page  
BSM150GB170DN2 E3166
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
300
A
260
IC 240
220
200
17V
15V
13V
11V
9V
7V
180
160
140
120
100
80
60
40
20
0
0.0 1.0 2.0 3.0 4.0
V 6.0
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
600
A
500
IC
450
400
350
300
250
200
150
100
50
0
0 2 4 6 8 10 V 14
VGE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
300
A
260
IC 240
220
200
17V
15V
13V
11V
9V
7V
180
160
140
120
100
80
60
40
20
0
0.0 1.0 2.0 3.0 4.0
V 6.0
VCE
Semiconductor Group
5
Aug-01-1996
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSM150GB170DN2E3166.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSM150GB170DN2E3166 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) | Siemens Semiconductor Group |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |