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PDF BSM191 Data sheet ( Hoja de datos )
| Número de pieza | BSM191 | |
| Descripción | SIMOPAC Module (Power module Single switch N channel Enhancement mode) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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SIMOPAC® Module
VDS = 1000 V
I D = 28 A
R DS(on) = 0.37 Ω
q Power module
q Single switch
q N channel
q Enhancement mode
q Package with insulated metal base plate
q Package outline/Circuit diagram: 11)
BSM 191
Type
BSM 191
Ordering Code
C67076-A1009-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Continuous drain current, TC = 25 ˚C
Pulsed drain current, TC = 25 ˚C
Operating and storage temperature range
Power dissipation, TC = 25 ˚C
Thermal resistance
Chip-case
Insulation test voltage2), t = 1 min.
Creepage distance, drain-source
Clearance, drain-source
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VDS
VDGR
VGS
ID
ID puls
Tj, Tstg
Ptot
Rth JC
Vis
–
–
–
–
Values
1000
1000
± 20
28
112
– 55 … + 150
700
≤ 0.18
2500
16
11
F
55/150/56
Unit
V
A
˚C
W
K/W
Vac
mm
–
1) See chapter Package Outline and Circuit Diagrams.
2) Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
71
03.96
1 page  
BSM 191
Typ. drain-source on-state resistance
RDS(on) = f (ID)
parameter: VGS
Drain-source on-state resistance
ROS(on) = f (Tj)
parameter: ID = 18 A; VGS = 10 V, (spread)
Gate threshold voltage
V =GS(th) f (Tj)
parameter: VDS = VGS , ID = 1 mA
Drain current ID = f (TC)
parameter: VGS ≥ 10 V, Tj = 150 ˚C
Semiconductor Group
75
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BSM191.PDF ] | |
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