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PDF BSM25GB120DN2 Data sheet ( Hoja de datos )
| Número de pieza | BSM25GB120DN2 | |
| Descripción | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSM25GB120DN2 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IGBT Power Module
BSM 25 GB 120 DN2
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 25 GB 120 DN2
VCE IC
1200V 38A
Package
HALF-BRIDGE 1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67076-A2109-A70
Values
1200
Unit
V
1200
± 20
38
25
A
76
50
200
+ 150
-55 ... + 150
≤ 0.6
≤1
2500
20
11
F
55 / 150 / 56
W
°C
K/W
Vac
mm
-
Semiconductor Group
1
Mar-29-1996
1 page  
BSM 25 GB 120 DN2
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
50
A
IC 40
35
30
17V
15V
13V
11V
9V
7V
25
20
15
10
5
0
0 1 2 3 V5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
50
A
IC 40
35
30
25
20
15
10
5
0
0 2 4 6 8 10 V 14
VGE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
50
A
IC 40
35
30
17V
15V
13V
11V
9V
7V
25
20
15
10
5
0
0 1 2 3 V5
VCE
Semiconductor Group
5
Mar-29-1996
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSM25GB120DN2.PDF ] | |
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| BSM25GB120DN2 | IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) | Siemens Semiconductor Group |
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