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PDF BSP170P Data sheet ( Hoja de datos )
| Número de pieza | BSP170P | |
| Descripción | SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSP170P (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SIPMOS® Power Transistor
•P-Channel
•Enhancement mode
•Avalanche rated
•dv/dt rated
Preliminary data
Pin 1
G
Type
BSP 170 P
VDS ID
RDS(on)
60 V -1.9 A 0.3 Ω
@ VGS
Package
VGS = -10 V SOT-223
-
BSP 170 P
Pin 2/4
D
Pin 3
S
Ordering Code
Q67041-S4018
Maximum Ratings , at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA = 25 °C
TA = 70 °C
Pulsed drain current
IDpulse
TA = 25 °C
Avalanche energy, single pulse
ID = -1.9 A, VDD = -25 V, RGS = 25 Ω
Avalanche current,periodic limited by Tjmax
Avalanche energy,periodic limited by Tj(max)
Reverse diode dv/dt
EAS
IAR
EAR
dv/dt
IS = -1.9 A, VDD ≤V(BR)DSS, di/dt = 200 A/µs,
Tjmax = 150 °C
Gate source voltage
Power dissipation
TA = 25 °C
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj
Tstg
Value
-1.9
-1.5
-7.6
70
-1.9
0.18
6
Unit
A
mJ
A
mJ
kV/µs
±20
1.8
-55 ... +150
-55...+150
55/150/56
V
W
°C
Semiconductor Group
1
07 / 1998
1 page  
Preliminary data
BSP 170 P
Power Dissipation
Ptot = f(TA)
BSP 170 P
1.8
W
Ptot 1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20 40 60 80 100 120 °C
160
TA
Drain current
ID = f (TA)
parameter:VGS≥ -10V
BSP 170 P
2.0
A
1.6
ID
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Semiconductor Group
5
07 / 1998
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSP170P.PDF ] | |
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