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PDF BSP452 Data sheet ( Hoja de datos )

Número de pieza BSP452
Descripción MiniPROFET (High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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Total 8 Páginas

No Preview Available ! BSP452 Hoja de datos, Descripción, Manual

MiniPROFET
High-side switch
Short-circuit protection
Input protection
Overtemperature protection with hysteresis
Overload protection
Overvoltage protection
Switching inductive load
Clamp of negative output voltage with inductive loads
Undervoltage shutdown
Maximum current internally limited
Electrostatic discharge (ESD) protection
Reverse battery protection1)
Package: SOT 223
Type
BSP 452
Ordering code
Q67000-S271
Mini PROFET® BSP 452
4
3
2
1
Application
µC compatible power switch for 12 V DC grounded loads
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically
integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.
Blockdiagramm:
ESD-
Diode
3 IN Rin
Voltage
source
V Logic
Voltage
sensor
Overvoltage Current
Gate
protection
limit protection
+ Vbb 4
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
OUT
Temperature
sensor
1
ESD Logic
Load
GND
2
Signal GND
MINI-PROFET
Load GND
1) With resistor RGND=150 in GND connection, resistor in series with IN connections reverse load current
limited by connected load.
Semiconductor Group
1
08.96

1 page




BSP452 pdf
Mini PROFET® BSP 452
Max. allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
18
16
14
12
TSP
10
8
6
4
TA
2
0
0 25 50 75 100
Current limit characteristic
IL(SC) = f (Von); (Von see testcircuit)
IL(SC) [A]
2
1.8
1.6
1.4
150°C
1.2 25°C
1 -40°C
0.8
0.6
0.4
0.2
0
125 150
0 2 4 6 8 10
TA, TSP[°C]
12 14
Von [V]
On state resistance (Vbb-pin to OUT-pin)
RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A
RON []
0.4
Typ. input current
IIN = f (VIN); Vbb = 13,5 V
IIN [µA]
50
0.35
0.3
0.25
98%
45
40
35
30
0.2 25
0.15
0.1
0.05
20
15
10
5
0
-50 -25 0
25 50 75 100 125 150
0
0246
Tj [°C]
-40°C
+25°C
+150°C
8 10 12 14
VIN [V]
Semiconductor Group
5

5 Page










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