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PDF BSP50 Data sheet ( Hoja de datos )
| Número de pieza | BSP50 | |
| Descripción | NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon Darlington Transistors
q High collector current
q Low collector-emitter saturation voltage
q Complementary types: BSP 60 … BSP 62 (PNP)
BSP 50
… BSP 52
Type
BSP 50
BSP 51
BSP 52
Marking
BSP 50
BSP 51
BSP 52
Ordering Code
(tape and reel)
Q62702-P1163
Q62702-P1164
Q62702-P1165
Pin Configuration
1 234
B CEC
Package1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Total power dissipation, TS = 124 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
Values
Unit
BSP 50 BSP 51 BSP 52
VCER
45
60 80
V
VCB0
60
80
100
VEB0
5
IC 1 A
ICM 2
IB 0.1
Ptot 1.5 W
Tj 150 ˚C
Tstg – 65 … + 150
Rth JA
Rth JS
≤ 72 K/W
≤ 17
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
1 page  
Collector-emitter saturation voltage
IC = f (VCE sat), IB-parameter
BSP 50
… BSP 52
Base-emitter saturation voltage
IC = f (VBE sat), IB-parameter
Transition frequency fT = f (IC)
VCE = 5 V, f = 100 MHz
Semiconductor Group
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BSP50.PDF ] | |
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