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PDF BSP742R Data sheet ( Hoja de datos )
| Número de pieza | BSP742R | |
| Descripción | Smart Power High-Side-Switch | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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BSP 742 R
Smart Power High-Side-Switch
Features
Product Summary
• Overload protection
Overvoltage protection
• Current limitation
Operating voltage
• Short circuit protection
On-state resistance
• Thermal shutdown with restart
Nominal load current
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• Open drain diagnostic output
• Open load detection in OFF - State
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• ESD - Protection
• Very low standby current
Vbb(AZ)
Vbb(on)
RON
IL(nom)
41
5...34
350
0.4
V
V
mΩ
A
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input
and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1
2004-03-16
1 page  
BSP 742 R
Electrical Characteristics
Parameter and Conditions
at Tj = -40...+150°C, Vbb = 13,5V, unless otherwise specified
Protection Functions1)
Initial peak short circuit current limit (pin 5 to 3)
Tj = -40 °C, Vbb = 20 V
Tj = 25 °C
Tj = 150 °C
Repetitive short circuit current limit
Tj = Tjt (see timing diagrams)
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL),
Ibb = 4 mA
Overvoltage protection 2)
Ibb = 4 mA
Thermal overload trip temperature
Thermal hysteresis
Symbol
Values
Unit
min. typ. max.
I L(SCp)
I L(SCr)
VON(CL)
-
-
0.4
-
41
-
1.2
-
1
47
A
2
-
-
-
-V
Vbb(AZ)
41
-
Tjt 150 -
∆Tjt - 10
-
- °C
-K
Reverse Battery
Reverse battery3)
Drain-source diode voltage (VOUT > Vbb)
Tj = 150 °C
-Vbb
-VON
- - 32 V
- 600 - mV
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2 see also VON(CL) in circuit diagram on page 8
3Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
Page 5
2004-03-16
5 Page 
Typ. turn on time
ton = f(Tj); RL = 47Ω
120
µs
80
60
40
Typ. turn off time
toff = f(Tj); RL = 47Ω
120
µs
9V
32V
13,5V
80
60
40
BSP 742 R
9...32V
20 20
0-40 -20 0 20 40 60 80 100 120 °C 160
Tj
Typ. slew rate on
dV/dton = f(Tj) ; RL = 47 Ω
0-40 -20 0 20 40 60 80 100 120 °C 160
Tj
Typ. slew rate off
dV/dtoff = f(Tj); RL = 47 Ω
2
V/µs
2
V/µs
1.6
1.4
1.2
1 32V
0.8
0.6 13,5V
0.4 9V
0.2
0-40 -20 0 20 40 60 80 100 120 °C 160
Tj
1.6
1.4
1.2
32V
1
0.8
0.6
13,5V
0.4 9V
0.2
0-40 -20 0 20 40 60 80 100 120 °C 160
Tj
Page 11
2004-03-16
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet BSP742R.PDF ] | |
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