|
|
|
부품번호 | BSP762 기능 |
|
|
기능 | Smart Power High-Side-Switch | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
전체 16 페이지수
BSP 762 T
Smart Power High-Side-Switch
Features
Product Summary
• Overload protection
Overvoltage protection
• Current limitation
Operating voltage
• Short circuit protection
On-state resistance
• Thermal shutdown with restart
Nominal load current
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• CMOS compatible input
• Loss of GND and loss of Vbb protection
• ESD - Protection
• Very low standby current
Vbb(AZ)
Vbb(on)
RON
IL(nom)
41
5...34
100
2
V
V
mΩ
A
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1
2004-01-27
BSP 762 T
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = -40...+150°C, Vbb = 13,5V, unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance
Tj = 25 °C, IL = 2 A, Vbb = 9...40 V
Tj = 150 °C
Nominal load current; Device on PCB 1)
TC = 85 °C, Tj ≤ 150 °C
Turn-on time
RL = 47 Ω
to 90% VOUT
Turn-off time
RL = 47 Ω
to 10% VOUT
RON
IL(nom)
ton
toff
Slew rate on 10 to 30% V OUT,
RL = 47 Ω
dV/dton
Slew rate off 70 to 40% V OUT,
RL = 47 Ω
-dV/dtoff
Values
Unit
min. typ. max.
mΩ
- 70 100
- 140 200
2 2.4 - A
- 90 170 µs
- 90 230
- 0.8 1.7 V/µs
- 0.8 1.7
Operating Parameters
Operating voltage
Undervoltage shutdown of charge pump
Tj = -40...+85 °C
Tj = 150 °C
Undervoltage restart of charge pump
Standby current
Tj = -40...+85 °C, VIN = 0 V
Tj = 150°C2) , VIN = 0 V
Leakage output current (included in Ibb(off))
VIN = 0 V
Operating current
VIN = 5 V
Vbb(on)
Vbb(under)
Vbb(u cp)
Ibb(off)
IL(off)
5
-
-
-
-
-
-
IGND
-
- 34 V
-4
- 5.5
4 5.5
µA
- 10
- 15
-5
0.5 1.3 mA
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2higher current due temperature sensor
Page 4
2004-01-27
4페이지 Terms
I IN
V IN
Vbb
Ibb
Vbb
IL
IN PROFET OUT
VON
GND
RGND
IGND
VOUT
Input circuit (ESD protection)
IN RI
ESD- ZDI
GND
II
The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended
Reverse battery protection
- Vbb
Logic
IN R I
Power
Inverse
Diode
OUT
GND
R GND
Signal GND
RL
Power GND
RGND=150Ω, RI=3.5kΩ typ.,
Temperature protection is not active during
inverse current
BSP 762 T
Inductive and overvoltage output clamp
+ Vbb
VZ
V ON
GND
OUT
VON clamped to 47V typ.
Overvoltage protection of logic part
IN R I
Logic
V Z2
+ Vbb
V Z1
R GND
GND
Signal GND
VZ1=6.1V typ., VZ2=Vbb(AZ)=47V typ.,
RI=3.5 kΩ typ., RGND=150Ω
Page 7
2004-01-27
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ BSP762.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BSP76 | Smart Lowside Power Switch | Infineon Technologies AG |
BSP762 | Smart Power High-Side-Switch | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |